? 2013 ixys corporation, all rights reserved IXYH40N120B3 v ces = 1200v i c110 = 40a v ce(sat) 2.9v t fi(typ) = 183ns ds100412b(03/13) g = gate c = collector e = emitter tab = collector to-247 ad g c e tab symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0v 1200 v v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = v ces , v ge = 0v 25 a t j = 150 c 500 a i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 40a, v ge = 15v, note 1 2.4 2.9 v t j = 150 c 3.1 v symbol test conditions maximum ratings v ces t j = 25c to 175c 1200 v v cgr t j = 25c to 175c, r ge = 1m 1200 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c (chip capability) 96 a i c110 t c = 110c 40 a i cm t c = 25c, 1ms 200 a i a t c = 25c 20 a e as t c = 25c 400 mj ssoa v ge = 15v, t vj = 150c, r g = 10 i cm = 80 a (rbsoa) clamped inductive load @v ce v ces p c t c = 25c 577 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c m d mounting torque 1.13/10 nm/lb.in. weight 6g features z optimized for 5-30khz switching z square rbsoa z positive thermal coefficient of vce(sat) z avalanche rated z international standard package advantages z high power density z low gate drive requirement applications z power inverters z ups z motor drives z smps z pfc circuits z battery chargers z welding machines z lamp ballasts 1200v xpt tm igbt genx3 tm extreme light punch through igbt for 5-30 khz switching
ixys reserves the right to change limits, test conditions, and dimensions. IXYH40N120B3 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 e ? p to-247 (ixyh) outline 1 2 3 terminals: 1 - gate 2 - collector 3 - emitter dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 40a, v ce = 10v, note 1 13 22 s c ie s 1690 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 117 pf c res 47 pf q g(on) 87 nc q ge i c = 40a, v ge = 15v, v ce = 0.5 ? v ces 12 nc q gc 38 nc t d(on) 22 ns t ri 50 ns e on 2.70 mj t d(off) 177 ns t fi 183 ns e of f 1.60 3.00 mj t d(on) 24 ns t ri 60 ns e on 5.25 mj t d(off) 205 ns t fi 206 ns e off 2.05 mj r thjc 0.26 c/w r thcs 0.21 c/w inductive load, t j = 25c i c = 40a, v ge = 15v v ce = 0.5 ? v ces , r g = 10 note 2 inductive load, t j = 125c i c = 40a, v ge = 15v v ce = 0.5 ? v ces , r g = 10 note 2 notes: 1. pulse test, t 300 s, duty cycle, d 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g .
? 2013 ixys corporation, all rights reserved IXYH40N120B3 fig. 1. output characteristics @ t j = 25oc 0 10 20 30 40 50 60 70 80 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 v ce - volts i c - amperes v ge = 15v 13v 12v 11v 10v 7v 9v 6v 8v fig. 2. extended output characteristics @ t j = 25oc 0 40 80 120 160 200 240 0 5 10 15 20 25 30 v ce - volts i c - amperes v ge = 15v 12v 9v 13v 10v 7v 11v 14v 6v 8v fig. 3. output characteristics @ t j = 150oc 0 10 20 30 40 50 60 70 80 00.511.522.533.544.555.5 v ce - volts i c - amperes 5v 7v 6v v ge = 15v 13v 11v 10v 9v 8v fig. 4. dependence of v ce(sat) on junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 40a i c = 20a i c = 80a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1 2 3 4 5 6 7 8 6 7 8 9 10 11 12 13 14 15 v ge - volts v ce - volts i c = 80 a t j = 25oc 40 a 20 a fig. 6. input admittance 0 10 20 30 40 50 60 70 80 90 100 345678910 v ge - volts i c - amperes t j = - 40oc 25oc 150oc
ixys reserves the right to change limits, test conditions, and dimensions. IXYH40N120B3 fig. 7. transconductance 0 5 10 15 20 25 30 0 102030405060708090100 i c - amperes g f s - siemens t j = - 40oc 25oc 150oc fig. 10. reverse-bias safe operating area 0 10 20 30 40 50 60 70 80 90 200 300 400 500 600 700 800 900 1000 1100 1200 1300 v ce - volts i c - amperes t j = 150oc r g = 10 ? dv / dt < 10v / ns fig. 11. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 pulse width - second z (th)jc - oc / w fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 102030405060708090 q g - nanocoulombs v ge - volts v ce = 600v i c = 80a i g = 10ma fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res
? 2013 ixys corporation, all rights reserved IXYH40N120B3 fig. 12. inductive switching energy loss vs. gate resistance 1 2 3 4 5 6 10 15 20 25 30 35 40 45 50 55 r g - ohms e off - millijoules 0 4 8 12 16 20 e on - millijoules e off e on - - - - t j = 125oc , v ge = 15v v ce = 600v i c = 40a i c = 80a fig. 15. inductive turn-off switching times vs. gate resistance 40 80 120 160 200 240 280 10 15 20 25 30 35 40 45 50 55 r g - ohms t f i - nanoseconds 100 200 300 400 500 600 700 t d ( off ) - nanoseconds t f i t d(off) - - - - t j = 125oc, v ge = 15v v ce = 600v i c = 80a i c = 40a fig. 13. inductive switching energy loss vs. collector current 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 20 30 40 50 60 70 80 i c - amperes e off - millijoules 0 2 4 6 8 10 12 14 e on - millijoules e off e on - - - - r g = 10 ? , v ge = 15v v ce = 600v t j = 125oc t j = 25oc fig. 14. inductive switching energy loss vs. junction temperature 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 25 50 75 100 125 t j - degrees centigrade e off - millijoules 0 2 4 6 8 10 12 14 e on - millijoules e off e on - - - - r g = 10 ? , v ge = 15v v ce = 600v i c = 40a i c = 80a fig. 16. inductive turn-off switching times vs. collector current 0 50 100 150 200 250 300 350 400 20 30 40 50 60 70 80 i c - amperes t f i - nanoseconds 120 140 160 180 200 220 240 260 280 t d(off) - nanoseconds t f i t d(off) - - - - r g = 10 ? , v ge = 15v v ce = 600v t j = 125oc t j = 25oc fig. 17. inductive turn-off switching times vs. junction temperature 0 50 100 150 200 250 300 350 25 50 75 100 125 t j - degrees centigrade t f i - nanoseconds 150 160 170 180 190 200 210 220 t d ( off ) - nanoseconds t f i t d(off) - - - - r g = 10 ? , v ge = 15v v ce = 600v i c = 40a i c = 80a
ixys reserves the right to change limits, test conditions, and dimensions. IXYH40N120B3 ixys ref: ixy_40n120b3(4a-c91) 11-10-11 fig. 19. inductive turn-on switching times vs. collector current 0 20 40 60 80 100 120 140 160 20 30 40 50 60 70 80 i c - amperes t r i - nanoseconds 10 14 18 22 26 30 34 38 42 t d ( on ) - nanoseconds t r i t d(on) - - - - r g = 10 ? , v ge = 15v v ce = 600v t j = 25oc t j = 125oc fig. 20. inductive turn-on switching times vs. junction temperature 20 40 60 80 100 120 140 160 25 50 75 100 125 t j - degrees centigrade t r i - nanoseconds 10 15 20 25 30 35 40 45 t d ( on ) - nanoseconds t r i t d(on) - - - - r g = 10 ? , v ge = 15v v ce = 600v i c = 80a i c = 40a fig. 18. inductive turn-on switching times vs. gate resistance 0 50 100 150 200 250 10 15 20 25 30 35 40 45 50 55 r g - ohms t r i - nanoseconds 0 20 40 60 80 100 t d ( on ) - nanoseconds t r i t d(on) - - - - t j = 125oc, v ge = 15v v ce = 600v i c = 40a i c = 80a
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